Aluminum gallium nitrogen AlGaN is an important deep ultraviolet luminescent material with broad prospects in the field of sterilization and disinfection.
Aluminum gallium nitride (AlGaN), also known as aluminum gallium nitride, is a ternary compound composed of aluminum, gallium, and nitrogen. It is a nitride semiconductor and an important wide bandgap…
Indium gallium zinc oxide (IGZO) can produce high-performance TFTs and has great room for development in the field of display panels
Indium gallium zinc oxide (IGZO) is a fourth-generation semiconductor material. It is a thin film transistor (TFT) technology that can be used as a channel material for high-performance TFTs. It has t…
Driven by national export control policies, the development prospects of the gallium phosphide (GaP) industry are promising
Gallium phosphide (GaP) refers to a group III-V compound artificially synthesized from the group IIIA element gallium (Ga) and the group VA element phosphorus (P). Gallium phosphide appears as an oran…
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